Implementation of Tunneling Junction Passivated Contact Concept in Flexible CIGS Solar Cells

Abstract In today's state‐of‐the‐art high‐efficiency silicon solar cells need to be inserted a thin insulating layer in order reduce the recombination losses between carrier transport and Si surface, which can form tunneling junction (TJ), thus increasing performance of TJ comparable with pn structure. However, copper indium gallium selenium (CIGS) inevitably lead due interface is widely assumed as pn‐heterojunction. Herein, cells, aiming enhance are fabricated by inserting TiO 2 CIGS/CdS deposited atomic deposition (ALD). By layer, CIGS/TiO /CdS structure effectively reduced recombination, leads band bending p‐CIGS surface compromises its field‐effect passivation. As result, CIGS cell achieves 15.57% based on stainless steel (SS) substrate, introducing barrier doping NaF. These results provide an important preliminary foundation for development